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| SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. PG05BAUSM TVS Diode for ESD Protection in Portable Electronics FEATURES Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. Low clamping voltage. Low leakage current. C L 2 A J G 1 M E B M D 3 H N K N DIM A B C D E G H J K L M N MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 0.42 0.10 MIN APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. 1. (TVS) D1 CATHODE 2. (TVS) D2 CATHODE 3. COMMON ANODE USM MAXIMUM RATING (Ta=25 CHARACTERISTIC Total Power Dissipation Junction Temperature Storage Temperature ) SYMBOL PPK Tj Tstg RATING 200 150 -55 150 UNIT mW Marking Type Name BA 3 D2 2 D1 1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Junction Capacitance ) TEST CONDITION It=5mA VRWM=5V VR=0V, f=1MHz MIN. 6.46 TYP. 3 MAX. 5 7.14 0.5 UNIT V V A pF SYMBOL VRWM VBR IR CJ 2007. 9. 10 Revision No : 2 1/2 PG05BAUSM NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME PEAK PULSE POWER PP P (W) 1K 110 POWER DERATION CURVE RATED POWER OR IPP (%) 100 100 90 80 70 60 50 40 30 20 10 0 0 25 50 Peak Pulse Power 8/20us Average Power 10 1 10 100 75 100 125 150 PULSE DURATION tP (s) AMBIENT TEMPERATURE Ta ( C) PULSE WAVEFORM PEAK PULSE CURRENT IPP (%) 110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 Waveform Parameters : tr=8s td=20s e -t CJ - VR 4 (pF) 3 CAPACITANCE CJ 2 td=lpp/2 1 0 0 1 2 3 4 5 TIME (s) REVERSE VOLTAGE VR (V) 2007. 9. 10 Revision No : 2 2/2 |
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